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Re: Driver for IGBT? (-ve off and +ve on from CMOS)

Subject: Re: Driver for IGBT? -ve off and +ve on from CMOS
From: Terry Given
Date: Tue, 11 Oct 2005 12:26:25 +1300
Newsgroups: sci.electronics.basics, sci.electronics.design
Ignoramus14838 wrote:
On Mon, 10 Oct 2005 21:36:11 +0000 (UTC), Ken Smith <kensmith@xxxxxxxxxxxxxxx> 
wrote:

In article <1128979008.34671@ftpsrv1>, Terry Given  <my_name@xxxxxxxx> wrote:

Ignoramus14838 wrote:

[.. a bunch of good stuff ..]

Just as a BTW: If you are current sensing by placing a resistance in the emitter leg (current Xformer included), a small capacitance across it, speeds up both the on an off times a bit.



Ken, are you talking about a snubber circuit?

nope. sometime (in little systems) you can bung a resistor between the emitter and 0V, to sense current. plop a cap across this, and the gatedrive can improve.

at 200A, its not worth doing. 1mOhm dissipates 40W....



Also:  I have used back biasing to speed up the turn off of MOSFETs.

just to clarify:

when discharging the gate of a FET (or an IGBT), it looks like a capacitive discharge - almost. its a bit funny, because the capacitance is nonlinear, but lets pretend its just a cap.

If the gate voltage is say 12V, and Vth is say 4V, the cap discharge equation is:

4V = 12V*exp(-t/(Rg*Cg)

which re-arranges to give:

t = -(Rg*Cg)*ln(4V/12V)

t = 1.099*(Rg*Cg) - it takes 1.1 time constants to discharge from 12V to 4V, at which time the device then begins to turn off.

actual turn-off time depends on how well the gatedrive can suck out the miller current.


If Ken used -12V, then the numbers change quite a bit. to make the maths easier, lets just add 12V to all ov the voltages:

Von = 12V
Vth = 4V
Voff = -12V

becomes:

Von = 24V
Vth = 16V
Voff = 0V

and we can use the same equation, giving

t = -(Rg*Cg)*ln(16V/24V)

ie t = -0.405*(Rg*Cg) - the fall time has more than halved.

another way to look at is to ask the question: what is the peak current thru Rg at the instant the gatedriver output switches low?

for 12V/0V drive , Cg is charged to +12V, gatedrive Vlow = 0V, so

Ig_max = Rg/(12V - 0V) = Rg/12V

for +12V/-12V drive , Cg is charged to +12V, gatedrive Vlow = -12V, so

Ig_max = Rg/(12V - (-12V)) = Rg/24V

so the peak current being sucked out of the cap is twice as high. which is why it gets down to Vth a lot faster.

*but* there is a penalty. Say Rg = 10R, then

Ig_max_unipolar = 12V/10R = 1.2A

Pg_max_unipolar = (1.2A^2)*10R = 14.4W



but for bipolar drive,

Ig_max_bipolar = 24V/10R = 2.4A

Pg_max_unipolar = (2.4A^2)*10R = 57.6W


so there aint no such thing as a free lunch.

I also wouldnt use a pissy little 0603 resistor for either of those jobs. the unipolar case certainly exceeds an 0603 peak pulse power rating, which is a few watts, but the bipolar drive is an order of magnitude too high.



Yes, looks like it is necessary in my case.
i


Cheers
Terry

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